Simulation Study of Microwave Microplasmas Based on Microstrip Technology

L. Tong [1], K. Saito [1],
[1] Keisoku Engineering System Co., Ltd., Tokyo, Japan
发布日期 2015

This paper presents a three-dimensional fluid model for a low-power microwave-excited argon microstrip plasma source operated at 2.45 GHz. The gas pressures in the gas channel are 50 and 100 Torr and the input power is 2 W. Simulations are performed by the Plasma Module of COMSOL Multiphysics@ software. The resonance zone at which the electron density is equal to the critical density is solved by adding an effective collision frequency to the momentum collision frequency. Results show that the governed ions are atomic argon ions (Ar+) and molecular argon ions (Ar2+) and the latter has a wider distribution. The electric field induced by the electromagnetic wave is concentrated in the neighborhood of the inner surface of gas channel under the microstrip line.