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Metal-semiconductor contact and Schottky barrier

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Hi,

I'm a graduate student working on in-situ TEM observation of phase transition triggered by electrical field.
I want to know the relation between phase transition and electric field, therefore have to compute the electric field and potential inside the TEM sample prepared by FIB.

It has a simple structure of metal-semiconductor-metal.

Nickel - 50 nm - top electrode
PZT - 110nm - semiconductor, we are interested in
SrRuO3 - substrate - almost metal

And in this structure I want to calculate the energy band profile and electric field.
I will use diffusion and drift model, but the key problem is how to set the Schottky barrier to the end of PZT layer.
I don't know how to set the Fermi level in the COMSOL.
So did anyone have solved this problem?

Thank you in advance for any answer,

best regards,

Subin

0 Replies Last Post 2012年2月29日 GMT-5 02:40
COMSOL Moderator

Hello Subin Lee

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